Here the input parameters are VBC and IB and the output parameters are VEC and IE. In this configuration the input signal is applied between the base-collector region and the output is taken from the emitter-collector region. Input Characteristics Output Characteristics chapter-5 In this configuration the input parameters are VBE and IB and the output parameters are VCE and IC. Here the input is applied between base-emitter region and the output is taken between collector and emitter terminals. In this configuration we use emitter as common terminal for both input and output. Input Characteristic Output Characteristic chapter-5 Here the input parameters are VEB and IE and the output parameters are VCB and IC. Here the input is applied between the base and emitter terminals and the corresponding output signal is taken between the base and collector terminals with the base terminal grounded. The configuration name itself indicates the common terminal. In this configuration we use base as common terminal for both input and output signals. Common Base (CB) Configuration Common Emitter (CE) Configuration Common Collector (CC) Configuration chapter-5 Therefore IE ~ IC chapter-5Ĩ Configuration of BJT There are three types of BJT Configuration on the basis of biasing. Thus by KCL, IE = IB + IC The base current is very small as compared to emitter and collector current. The remaining large number of electrons will cross the reverse biased collector junction to constitute the collector current. This constitutes the base current, it flows due to recombination of electrons and holes. chapter-5ħ As the base is thin and lightly doped it consists of very few holes so some of the electrons from the emitter (about 2%) recombine with the holes present in the base region and flow out of the base terminal. The forward bias at the BE junction reduces the barrier potential and causes the electrons to flow from the emitter to base. The width of the depletion region of the BE junction is small as compared to that of the CB junction. the BE junction is forward biased whereas the CB junction is reversed biased. The terminals are labeled: E - Emitter B - Base C - Collector chapter-5Ħ Working of BJT Figure shows an n-p-n transistor biased in the active region. chapter-5ĥ BJT Construction There are two types of transistors: 1. This allows BJTs to be used as amplifiers or switches, giving them wide applicability in electronic equipment, including computers, televisions, mobile phones, audio amplifiers, industrial control, and radio transmitters. The basic function of a BJT is to amplify current. BJTs are manufactured in two types, NPN and PNP, and are available as individual components, or fabricated in integrated circuits, often in large numbers. Gain medium Incoherent Light Coherent Source Drain Gate Valve Artery Vein Dam Laser Heart Ion Channel Emitter Collector Base BJT MOSFET Axonal conduction chapter-5Ī bipolar junction transistor (bipolar transistor or BJT) is a type of transistor that uses both electron and hole charge carriers. Amplifier Voltage, Current and Power Amplifiers chapter-5ģ Transistor/switch/amplifier – a 3 terminal device TRANSISTORS Objectives In this Chapter, student will learn the following topics:- Introduction of Bipolar Junction Transistor(BJT) Construction and Working of BJT BJT Configuration Regions of operation, Active, Cutoff, Saturation. Presentation on theme: "Electronic Circuits-1(CNET-112) Level 4th Department of CNET"- Presentation transcript:ġ Electronic Circuits-1(CNET-112) Level 4th Department of CNETĬollege of CS & IS Jazan University KSA chapter-5Ģ In this Chapter, student will learn the following topics:.
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